{"title":"Unipolar characteristics of Carbon Nanotube Field Effect Transistor","authors":"V. Sridevi, T. Jayanthy","doi":"10.1109/RSTSCC.2010.5712839","DOIUrl":null,"url":null,"abstract":"Carbon Nano Tube (CNT) is one of the several cutting edge emerging technologies within Nano technology, that is showing high efficiency and very wide range of applications in many different streams of science and technology. The Carbon Nano Tube Field Effect Transistors (CNTFETs) have been explored and proposed to be the promising candidate for the next generation of integrated circuit (IC) devices. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance. However, to do that we need a model that can accurately describe the behavior of the CNTFETs so that the design and evaluation of circuits using these devices can be made. This paper focuses on compact modeling of CNTFET and analysis of the performance of the developed model using various characteristics.","PeriodicalId":254761,"journal":{"name":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSTSCC.2010.5712839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Carbon Nano Tube (CNT) is one of the several cutting edge emerging technologies within Nano technology, that is showing high efficiency and very wide range of applications in many different streams of science and technology. The Carbon Nano Tube Field Effect Transistors (CNTFETs) have been explored and proposed to be the promising candidate for the next generation of integrated circuit (IC) devices. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance. However, to do that we need a model that can accurately describe the behavior of the CNTFETs so that the design and evaluation of circuits using these devices can be made. This paper focuses on compact modeling of CNTFET and analysis of the performance of the developed model using various characteristics.