Strongly Compensated Silicon-Based Sensitive Photo Receives of Infrared Radiation of Novel Design

2006 2nd IEEE/IFIP International Conference in Central Asia on Internet Pub Date : 2006-09-01 DOI:10.1109/CANET.2006.279249

K. Ayupov, D. Bobonov, K. Haydarov, M.K. Bahadirhanov, D.B. Sharafutdinova

引用次数: 0

Abstract

Thus, we have been able to demonstrate, that one can develop and design novel type strongly compensated silicon, type p- Si-based highly sensitive and low inertia infrared photo receivers operating within the range of lambda = 3-1,1 micron in the existing integral lighting.

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新型强补偿硅基敏感光接收红外辐射

因此，我们已经能够证明，人们可以开发和设计新型强补偿硅，p- si型基于高灵敏度和低惯性的红外光接收器，工作在λ = 3-1,1微米的范围内，在现有的整体照明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 2nd IEEE/IFIP International Conference in Central Asia on Internet

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