A self-aligned vertical Kelvin test structure to measure contact resistivities of Al and Ti on Si

W. Yang, T. F. Lei, C. Lee
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引用次数: 0

Abstract

A self-aligned vertical Kelvin test resistor structure, which not only eliminates the horizontal current crowding but also avoids the misalignment error, is proposed and used to measure p/sub c/ of Al and Ti on Si. For the Al(1%Si)/n/sup +/-Si contact system, a specific contact resistivity of 1*10/sup -7/ Omega -cm/sup 2/ has been measured. For the TiSi/sub 2/ contacts, the TiSi/sub 2/(direct-reaction)/n/sup +/-Si contact offers a lower p/sub c/ than that of the coevaporated TiSi/sub 2//n/sup +/-Si contact, and p/sub c/ does not change even after the contacts are annealed to 900 degrees C.<>
一种自对准垂直开尔文测试结构,用于测量铝和钛硅的接触电阻率
提出了一种自对准垂直开尔文测试电阻结构,该结构既消除了水平电流拥挤,又避免了不对准误差,并用于测量Al和Ti Si的p/sub / c/。对于Al(1%Si)/n/sup +/-Si接触系统,测量了1*10/sup -7/ Omega -cm/sup 2/的特定接触电阻率。对于TiSi/sub 2/触点,TiSi/sub 2/(直接反应)/n/sup +/-Si触点的p/sub c/比共蒸发TiSi/sub 2//n/sup +/-Si触点的p/sub c/低,即使在触点退火到900℃后p/sub c/也没有变化。
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