A millimeter-wave flip-chip IC using micro-bump bonding technology

H. Sakai, Y. Ota, K. Inoue, M. Yanagihara, T. Matsuno, M. Tanabe, T. Yoshida, Y. Ikeda, S. Fujita, K. Takahashi, M. Sagawa
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引用次数: 14

Abstract

This millimeter-wave flip-chip IC (MFIC) is a compact hybrid constructed by bonding a mm-wave transistor or its IC chips upside down on thin film microstrip lines formed on a Si substrate. Production costs of this IC are expected to be drastically reduced compared with those of the conventional MMIC because the passive elements, which usually occupy large chip area, are formed not on the expensive heterostructure substrate, but on the low-cost Si substrate. Moreover, design flexibility such as a device choice and integration is expanded including the integration of antennas. Using 9 /spl mu/m-thick p-CVD SiO/sub 2/ as a dielectric film, microstrip lines on Si substrate were realized. Using MBB technology to fabricate K-band MFIC amplifiers demonstrates the MFIC concept.
采用微碰撞键合技术的毫米波倒装集成电路
这种毫米波倒装芯片集成电路(MFIC)是一种紧凑的混合电路,通过将毫米波晶体管或其集成电路芯片倒扣在硅衬底形成的薄膜微带线上构建而成。由于通常占据较大芯片面积的无源元件不是在昂贵的异质结构衬底上形成的,而是在低成本的Si衬底上形成的,因此与传统的MMIC相比,该IC的生产成本有望大幅降低。此外,扩展了设计灵活性,如设备选择和集成,包括天线的集成。采用9 /spl μ /m厚的p-CVD SiO/ sub2 /作为介质膜,在Si衬底上实现了微带线。利用MBB技术制造k波段MFIC放大器,展示了MFIC的概念。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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