Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET

Abstract

Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D/sub it/ and N/sub A/ of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D/sub it/ and N/sub A/ of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D/sub it/ and N/sub A/ of the sidewall channel were about 1.6/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/ and 7/spl times/10/sup 14/ cm/sup -3/ respectively. These values are an order of magnitude larger and smaller than those of the main channel.