Amplification of Space Charge Waves of Millimeter Wave Range in N-Gan Films

V. Grimalsky, S. Koshevaya, F. Diaz-A, I. Moroz
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Abstract

Spatial amplification of millimeter wave range (f = 30 - 200 GHz) space charge waves in n-GaN films is investigated theoretically. An amplification is due to the negative differential conductivity in GaN films placed onto a semi-infinite substrate is considered and possible spatial increments are calculated. Both diffusion-drift equations for volume electron concentration and also an approximation of two-dimensional electron gas were used jointly with the Poisson equation for the electric field. There no principal difference between these two approaches in the frequency range f les 150 GHz.
N-Gan薄膜中毫米波范围空间电荷波的放大
从理论上研究了n-GaN薄膜中毫米波范围(f = 30 ~ 200ghz)空间电荷波的空间放大。放大是由于负差分电导率的氮化镓薄膜放置在半无限基片被考虑和可能的空间增量计算。将体积电子浓度的扩散漂移方程和二维电子气体的近似方程与电场的泊松方程联合使用。在150千兆赫以下的频率范围内,这两种方法之间没有主要区别。
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