The radiation-hardened voltage references on bipolar and JFET transistors

Abstract

This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.