CHARGE MOBILITY ALONG THE POLYMER/POLYMER INTERFACE

A. N. Lachinov, H. Davletgareev, A. R. Yakhin, A. Yusupov, D. D. Karamov, A. F. Galiev
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引用次数: 1

Abstract

Organic thin-film transistors are increasingly being used in various electronic devices, successfully replacing transistors on silicon and other traditional semiconductors. The advantages of such electronic devices are particularly noticeable in the development of flexible electronic devices. However, one of the intractable problems of organic devices is the low mobility of charge carriers, often not exceeding 10-3 cm2/Vs. Obviously, this significantly limits the scope of their application. In this paper, a new approach to the formation of a transport layer in an organic field-effect transistor is proposed. This approach is based on the use of anomalous transport properties occurring along the interface of two dielectrics. Along such a boundary, a layer of quasi-two-dimensional electron gas with abnormally large values of conductivity and mobility of charge carriers can occur. In this regard, polymer heterostructures representing a field-effect transistor with a transport layer made in the form of an interface between two films of an unconjugated (dielectric) polymer, polydiphenylene phthalide, were investigated in this work. Along such a boundary, a layer of quasi-two-dimensional electron gas with abnormally large values of conductivity and mobility of charge carriers can occur. In this regard, polymer heterostructures representing a field-effect transistor with a transport layer made in the form of an interface between two films of an unconjugated (dielectric) polymer, polydiphenylene phthalide, were investigated in this work. The paper describes the technology of creating a multielectrode device. Polymer films were made by centrifugation from a polymer solution in cyclohexanone. The metal electrodes were manufactured by thermal deposition in vacuum. Measurements of the electrophysical characteristics of an organic field-effect transistor have been carried out. It is established that the main charge carrier along the interface are electrons. Estimates of the mobility of charge carriers were carried out using two different techniques. At zero potential at the gate, an injection model of currents limited by a volumetric charge was used. In the presence of a potential on the gate, the mobility assessment was made within the framework of the field effect model. Comparison of the obtained estimates showed satisfactory agreement of the mobility values. From this fact, it was concluded that it is possible to use an injection model to estimate the mobility of charge carriers when they move along the polymer/polymer interface.
沿聚合物/聚合物界面的电荷迁移率
有机薄膜晶体管越来越多地应用于各种电子器件,成功地取代了硅晶体管和其他传统半导体。这种电子器件的优点在柔性电子器件的发展中尤为明显。然而,有机器件的一个棘手问题是载流子的低迁移率,通常不超过10-3 cm2/Vs。显然,这极大地限制了它们的应用范围。本文提出了一种在有机场效应晶体管中形成输运层的新方法。这种方法是基于利用沿两个电介质界面发生的异常输运性质。沿着这样的边界,会出现一层具有异常大的电导率和载流子迁移率的准二维电子气体。在这方面,聚合物异质结构代表场效应晶体管,其传输层以两种非共轭(介电)聚合物(聚二苯酞)薄膜之间的界面形式制成。沿着这样的边界,会出现一层具有异常大的电导率和载流子迁移率的准二维电子气体。在这方面,聚合物异质结构代表场效应晶体管,其传输层以两种非共轭(介电)聚合物(聚二苯酞)薄膜之间的界面形式制成。本文介绍了制作多电极器件的工艺。以环己酮为溶剂,用离心分离法制备聚合物膜。采用真空热沉积法制备金属电极。对一个有机场效应晶体管的电物理特性进行了测量。确定了沿界面的主要载流子是电子。利用两种不同的技术对载流子的迁移率进行了估计。在栅极电位为零时,采用体积电荷限制的电流注入模型。在栅极上存在电位的情况下,在场效应模型的框架内对栅极的迁移率进行了评估。得到的估计值的比较表明流动性值的一致性令人满意。由此得出结论,当载流子沿着聚合物/聚合物界面移动时,可以使用注入模型来估计载流子的迁移率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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