High-precision wafer-level Cu-Cu bonding for 3DICs

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7047118

M. Okada, Isao Sugaya, Hajime Mitsuishi, Hidehiro Maeda, T. Shimoda, S. Izumi, Hosei Nakahira, K. Okamoto

引用次数: 9

Abstract

A high-precision Cu-Cu bonding system for three-dimensional integrated circuits (3DICs) fabrication adopting a new precision alignment methodology is proposed. A new pressure profile control system is applied in the thermocompression bonding process. Experimental results show that the alignment capability is 250 nm or better, with similar overlay accuracy (|average| + 3σ) for permanent bonding. These developments are expected to contribute to the fabrication of future 3DICs.

查看原文本刊更多论文

用于3dic的高精度晶圆级Cu-Cu键合

提出了一种采用高精度对准方法的三维集成电路(3dic)高精度Cu-Cu键合系统。一种新的压力分布控制系统应用于热压粘接过程。实验结果表明，该方法具有250 nm以上的对准能力，具有相似的覆盖精度(|平均| + 3σ)。预计这些发展将有助于未来3dic的制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊