Fully-depleted SOI NMOS transistors with p/sup +/-polysilicon gate

Abstract

p/sup +/ polysilicon and n/sup +/ polysilicon were used as the gate material for fully-depleted SOI NMOS transistors. It's found that n-channel transistors with p+ poly gates require lower channel doping levels than their n/sup +/ poly counterparts, leading to easier formation of depleted film and control of the threshold voltage. The low channel doping results in improved source-drain breakdown characteristic.