{"title":"Device Reliability Challenges in Advanced FinFET Technology","authors":"X. Wan","doi":"10.31399/asm.edfa.2019-4.p030","DOIUrl":null,"url":null,"abstract":"\n This article discusses the effect of hot carrier injection, bias temperature instability, and time-dependent dielectric breakdown on FinFET performance and reliability.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2019-4.p030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This article discusses the effect of hot carrier injection, bias temperature instability, and time-dependent dielectric breakdown on FinFET performance and reliability.