Impact of self-heating effects on the design of SOI devices versus temperature

Abstract

The operation of SOI devices is limited by self-heating phenomena (SH) due to the low thermal conductivity of the buried oxide. Although much research has been carried out in this field, only recently a SH small signal model has been established versus temperature. However, no detailed analysis of the impact of SH effects on the design of SOI devices has been worked out as a function of temperature. The aim of this paper is first to confirm the previous model by comparing extracted oxide thermal conductivity experimentally measured on fused silica, and, second to evaluate the SH impact on SOI device operation versus temperature.