Nonlinear characteristics and RF losses of CPW and TFMS lines over a wide temperature range

K. Ben Ali, J. Raskin
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引用次数: 1

Abstract

This paper analyzes RF losses and non-linear behavior from room temperature up to 175°C of coplanar waveguide (CPW) and thin film microstrip (TFMS) lines fabricated on both High Resistivity (HR) and Standard resistivity (STD) Silicon-on-Insulator (SOI) substrates. Through measurements it is shown that CPW topology exhibits larger 2nd harmonic distortion level, more than 25 dB higher compared with TFMS counterpart at 25°C, whereas the later shows larger insertion losses. At higher temperature, RF losses increase for both transmission line topologies whereas the 2nd and 3rd harmonic levels are almost not affected by the temperature increase.
宽温度范围内CPW和TFMS线的非线性特性和射频损耗
本文分析了在高电阻率(HR)和标准电阻率(STD)绝缘体上硅(SOI)衬底上制备的共面波导(CPW)和薄膜微带(TFMS)线在室温至175℃范围内的射频损耗和非线性行为。通过测量表明,CPW拓扑在25°C时表现出更大的二次谐波失真水平,比TFMS拓扑高25 dB以上,而后者则表现出更大的插入损耗。在较高的温度下,两种传输线拓扑结构的射频损耗都增加,而第二和第三次谐波电平几乎不受温度升高的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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