OCVD carrier lifetime measurements on an inhomogeneous diode structure

Vitezslav Benda, Zdenek Novak
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引用次数: 8

Abstract

This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.
非均匀二极管结构的OCVD载流子寿命测量
本文研究了用OCVD(开路电压衰减)法在非均匀载流子寿命分布结构上测量载流子寿命的问题。一个简单的模型,两个二极管并联连接(集中电荷近似)已被用于评估所测量的载流子寿命。理论分析得到了实验验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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