Finite element modeling of ZnO nanowire with different configurations of electrodes connected to external capacitive circuit for pressure sensing applications

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2015-04-19 DOI:10.1109/EUROSIME.2015.7103134

R. Dauksevicius, R. Gaidys, E. O’Reilly, M. Seifikar

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引用次数: 4

Abstract

This paper reports the results of finite element modeling and analysis of a vertically-aligned ZnO nanowire including surrounding chip components (seed layer, insulating top layer and metal electrodes), taking into account the influence of external capacitance and considering different nanowire morphologies and electrode topographies in order to predict magnitude of electrical outputs as a function of applied dynamic load (compression and/or bending). The length and diameter of the modeled nanowire is in the μm and sub-μm range, respectively and it is intended to function as a single “piezo-pixel” in a matrix of interconnected ZnO nanowires performing dynamic pressure sensing, which could be used for ultraprecise reconstruction of the smallest fingerprint features in highly-reliable security and ID applications.

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压力传感应用中不同电极结构ZnO纳米线的有限元建模

本文报告了一种垂直排列的ZnO纳米线的有限元建模和分析结果，包括周围的芯片组件(种子层，绝缘顶层和金属电极)，考虑外部电容的影响，并考虑不同的纳米线形态和电极形貌，以预测电输出的大小作为施加动态载荷(压缩和/或弯曲)的函数。模型纳米线的长度和直径分别在μm和亚μm范围内，其目的是在具有动态压力传感功能的互连ZnO纳米线矩阵中作为单个“压电像素”，可用于高可靠的安全和身份识别应用中最小指纹特征的超精密重建。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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