Low temperature microwave annealed FinFETs with less Vth variability

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480527

K. Endo, Y. Lee, Y. Ishikawa, F. Hsueh, P. Sung, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, H. Yamauchi, M. Masahara

引用次数: 0

Abstract

FinFETs with the low temperature microwave annealing process have been successfully fabricated and the superiority of the microwave annealing process has been precisely studied. For the first time, it is revealed that the microwave annealed FinFET exhibits less Vth variability and lower gate leakage.

查看原文本刊更多论文

低电压变异性的低温微波退火finfet

采用低温微波退火工艺成功制备了非场效应管，并对微波退火工艺的优越性进行了较为精确的研究。首次揭示了微波退火FinFET具有较小的Vth变异性和较低的栅极泄漏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

自引率

0.00%

发文量