Memory trends - Session 20

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Pub Date : 1900-01-01 DOI:10.1109/cicc.2004.1358847

T. Akioka, B. Prince

引用次数: 0

Abstract

This session presents trends in embedded and emerging memories including an overview of issues for advanced embedded SRAM and DRAM and discussion of high density FeRAM and tunnel junction MRAM. A novel gain cell using a single electron transistor for SRAM-type data storage is described along with a new ternary CAM macro and an on-chip programmable CMOS based OTP anti-fuse.

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记忆趋势-第20部分

本次会议将介绍嵌入式和新兴存储器的发展趋势，包括高级嵌入式SRAM和DRAM的问题概述，以及高密度FeRAM和隧道结MRAM的讨论。描述了一种用于sram类型数据存储的新型增益单元，以及一种新的三元CAM宏和基于片上可编程CMOS的OTP反熔丝。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)

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