Tin dioxide sol-gel derived thin films deposited on porous silicon

Abstract

SnO/sub 2/ and SnO/sub 2/:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO/sub 2//Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO/sub 2/ sol-phase in the nanometric pores followed by the SnO/sub 2/ consolidation film in the pores of the PS, during subsequent annealing at 500/spl deg/C has been experimentally proved.