Impact of stress on various circuit characteristics in 65nm PDSOI technology

S. Suryagandh, Mayank Gupta, Zhiyuan Wu, S. Krishnan, M. Pelella, J. Goo, C. Thuruthiyil, J. An, Brian Q. Chen, N. Subba, L. Zamudio, J. Yonemura, A. Icel
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Abstract

Logic performance is improved by creating more stress in the channel in advanced CMOS technologies. Impact of stress on different circuit blocks in a microprocessor chip has not been studied in detail. This paper presents a comprehensive study on the effects of stress and the corresponding process steps on various circuit characteristics. Analog behavior, hysteresis and noise properties are investigated to understand the effect of stress on them. These characteristics play important roles in determining the performances of analog/phy, I/O and PLL blocks respectively. It is shown that the type of process steps used for stress optimization can significantly alter the performance of various circuits.
应力对65nm PDSOI技术中各种电路特性的影响
在先进的CMOS技术中,通过在通道中产生更多的应力来提高逻辑性能。在微处理器芯片中,应力对不同电路块的影响尚未得到详细的研究。本文全面研究了应力和相应的工艺步骤对各种电路特性的影响。研究了模拟行为、迟滞和噪声特性,以了解应力对它们的影响。这些特性分别对模拟/物理、I/O和锁相环模块的性能起着重要的决定作用。结果表明,用于应力优化的工艺步骤类型可以显著改变各种电路的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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