0.25μm, 20V high performance complementary bipolar transistor with dual EPI and oxide-filled deep trench isolation for high frequency DC-DC converters

Abstract

Power supply designers must increase the switching frequency of converters to meet industry demands for small sizes. In order to handle high switching frequency, a closed-loop DC-DC converter needs a high-speed error amplifier with low Rdson.Qg LDMOS power switches. In this paper, 0.25um, 20V high performance complementary bipolar transistors were developed for the high-speed error amplifier design. Dual epi was used to suppress parasitic bipolar behavior that leads to a latch-up. Also, an oxide-filled deep trench isolation was used to minimize parasitic capacitance. As a result, robust 5GHz NPN and 3GHz PNP transistors were integrated with a low Rdson.Qg LDMOS.