{"title":"Junction Temperature Consistency Analysis of MMC Submodule","authors":"Zhuo Chen, Yumei Guo, Xiang-dong Wang","doi":"10.18686/ESTA.V8I1.175","DOIUrl":null,"url":null,"abstract":"<p> Although modular multilevel converter<span style=\"font-family: 宋体;\">（</span><span style=\"font-family: 'Times New Roman';\">MMC</span><span style=\"font-family: 宋体;\">）</span><span style=\"font-family: 'Times New Roman';\">is widely used in the field of DC power transmission due to its</span></p><p>excellent topology performance, the natural DC bias characteristics cause thermal imbalance of internal devices. Too high temperature at the junction of power devices is one of the major causes of damage. Therefore, it is necessary to investigate the factors that affect the device junction temperature. Combining with the thermal resistance model, the junction temperature under two typical modulation strategies <span style=\"font-family: 'Times New Roman';\">is compared, </span>and the power loss and junction temperature are calculated.</p>","PeriodicalId":106850,"journal":{"name":"Electronics Science Technology and Application","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Science Technology and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18686/ESTA.V8I1.175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Although modular multilevel converter（MMC）is widely used in the field of DC power transmission due to its
excellent topology performance, the natural DC bias characteristics cause thermal imbalance of internal devices. Too high temperature at the junction of power devices is one of the major causes of damage. Therefore, it is necessary to investigate the factors that affect the device junction temperature. Combining with the thermal resistance model, the junction temperature under two typical modulation strategies is compared, and the power loss and junction temperature are calculated.
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