1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

H. Kanaya, Kohei Tasaki, R. Takigawa
{"title":"1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS","authors":"H. Kanaya, Kohei Tasaki, R. Takigawa","doi":"10.1109/RFIT49453.2020.9226205","DOIUrl":null,"url":null,"abstract":"This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 1⨯2 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 1⨯2 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.
基于45nm SOI CMOS的1.0太赫兹单面定向槽天线
本文设计了一种面向未来1THz频段通信应用的单面定向缝隙天线。该天线采用45 nm SOI CMOS技术实现。该天线由顶部天线层、薄介电中间层和底部浮动金属层组成。为了提高带宽,仿真设计了1个天线阵列,天线增益为6.2 dBi, 1thz时带宽为250GHz 3dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信