Eutectic solder bump process for ULSI flip chip technology

H. Ezawa, M. Miyata, H. Inoue
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引用次数: 5

Abstract

A novel eutectic solder bump process, which allows ULSI chips area array pad layout, has been developed. Straight side wall bumps as plated using a new negative-type photoresist and eutectic solder electroplating provide several advantages over conventional mushroom bumps. The novel developed process gives the bump height uniformity as reflowed of less than 10% within the wafer. Composition measurements using ICP spectrometry have been performed to investigate the bump height dependence on solder compositions and the metal content dependence of a plating solution on the solder composition uniformity within the wafer. Experimental results show that the plating solution with the total metal concentration of more than 60 g/l gives a uniformity at eutectic point of less than 3% within wafer. In addition, we have confirmed that the use of a eutectic solder disk anode keeps the composition of a plating solution constant for a long term product run.
用于ULSI倒装芯片技术的共晶凸点焊工艺
提出了一种新的共晶凸焊工艺,可实现ULSI芯片的区域阵列焊盘布局。采用新型负极型光刻胶和共晶焊料电镀的直侧壁凸点与传统的蘑菇凸点相比具有许多优点。该工艺可使圆片内回流时凸点高度均匀性小于10%。利用ICP光谱法进行成分测量,以研究凸起高度对焊料成分的依赖性,以及电镀溶液中金属含量对晶圆片内焊料成分均匀性的依赖性。实验结果表明,总金属浓度大于60 g/l的镀液在晶圆内共晶点均匀度小于3%。此外,我们已经证实,使用共晶焊盘阳极可以使电镀溶液的成分在长期产品运行中保持不变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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