Cryogenic Characteristics of Ge channel Junctionless Nanowire Transistors

Abstract

We fabricated high performance Ge channel junctionless nanowire transistors (JNTs) and demonstrated their cryogenic characteristics from 90 to 270 K. The results show that the leakage current is more sensitive to temperature than drive current. The slope of threshold voltage shift with temperature is estimated to be 2.5 mV/K. Low field mobility decreases with reduced temperature and is found to be limited by both Coulomb scattering and neutral defects scattering.