Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell

Abstract

A V_th self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the V_th self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, V_th automatically decreases at on-state and increases at off-state, resulting in high I_on/I_off ratio as well as stable SRAM operation at low V_dd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with V_th self-adjusting nFETs and pFETs.