Output Breakdown Characteristics and the Related Degradation Behaviors in Metal Oxide Thin Film Transistors

Abstract

Output breakdown (OBD) characteristics of metal oxide thin film transistors (TFTs) is studied. Three kinds of OBD behaviors are observed, corresponding to off state, subthreshold region and on state. The device degradation behaviors under OBD voltage stress is investigated. OBD stress can induce severe device degradation in very short stress time. The degradation mechanism is tentatively discussed, incorporated with TCAD simulation.