Investigation of Single Event Latch-up effects in the ALICE SAMPA ASIC

S. Mahmood, K. Roeed
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引用次数: 1

Abstract

During RUN 3 and RUN 4 at the Large Hadron Collider (LHC), the SAMPA chip will be used in the upgraded front end electronics of the ALICE (A Large Ion Collider Experiment) Time Projection Chamber (TPC) and Muon Chambers (MCH). Previously, it was reported that the SAMPA V2 prototypes were susceptible to the high energy proton induced Single Event Latch-up (SEL) events. Further irradiation campaigns were required to find the source of SEL events in SAMPA V2 prototypes, and to verify that the SEL sensitivity of final versions (V3 and V4) of the SAMPA chip was reduced or even completely removed. The irradiation campaigns were performed using the Heavy-Ion Facility (HIF) at UCL (Universitè Catholique de Louvain) in Belgium and the Single-Photon laser facility at IES (Institute of Electronics and Systems), Montpellier-France.
ALICE SAMPA ASIC中单事件锁存效应的研究
在大型强子对撞机(LHC)的RUN 3和RUN 4中,SAMPA芯片将用于ALICE(大型离子对撞机实验)时间投影室(TPC)和μ子室(MCH)的升级前端电子设备。此前,有报道称SAMPA V2原型机容易受到高能质子诱导的单事件锁存(SEL)事件的影响。需要进一步的辐照活动来寻找SAMPA V2原型中SEL事件的来源,并验证SAMPA芯片最终版本(V3和V4)的SEL灵敏度是否降低甚至完全去除。使用比利时伦敦大学学院(Universitè Catholique de Louvain)的重离子设备(HIF)和法国蒙彼利埃电子与系统研究所(IES)的单光子激光设备进行辐照。
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