A high-performance processor for optimal ate pairing computation over Barreto–Naehrig curves

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Yujun Xie, Bin Wang, Lijun Zhang, Xin Zheng, Xiaoling Lin, Xiaoming Xiong, Yuan Liu
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引用次数: 1

Abstract

This paper presents a high-performance processor for optimal ate pairing on Barreto–Naehrig curves over 256-bit prime field at the 128-bit security level. The proposed design exploits parallelism and pipeline at different levels of the pairing algorithm, including the prime field operation, the second extension of the prime field F p 2 $\left({F}_{{p}^{2}}\right)$ operation, and operations based on F p 2 ${F}_{{p}^{2}}$ . The proposed design needs 37,271 cycles to compute optimal ate pairings. The results of implementation on a 90 nm standard cell library show that the proposed design consumes 751k gates and can compute the respective pairings in 0.10 ms. This result is at least 60 percent better than related reports in terms of normalised area-time on ASIC. Moreover, the design is also implemented on Xilinx Virtex-6 platform, which consumes 25K Slices and 240 DSPs and takes 0.52 ms to calculate one optimal ate pairing operation.

Abstract Image

Barreto-Naehrig曲线最优共轭计算的高性能处理器
本文提出了一种高性能处理器,用于256位素数域上Barreto-Naehrig曲线在128位安全级别上的最优值配对。提出的设计利用了配对算法不同层次的并行性和流水线性,包括主要字段操作,素数域F p 2 $\左({F}_{{p}}^{2}}\右)$运算的第二次扩展,以及基于F p 2 ${F}_{{p}^{2}}$的操作。所提出的设计需要37271个循环来计算最优的匹配。在90 nm标准细胞库上的实现结果表明,所提出的设计消耗751k栅极,可以在0.10 ms内计算出相应的配对。该结果比相关报告在ASIC上的标准化区域时间至少好60%。此外,该设计还在Xilinx Virtex-6平台上实现,该平台消耗25K Slices和240个dsp,计算一个最优的ate配对操作耗时0.52 ms。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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