A model for reverse short-channel effects in MOSFETs

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI:10.1109/ICCDCS.1995.499163

R. Narayanan, A. Ortiz-Conde, J. Liou, L. Golovanova, W. Wong, F. Garcia Sanchez

引用次数: 3

Abstract

A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects.

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mosfet中反向短沟道效应的模型

通过在p沟道MOSFET的源极和漏极附近增加两个独立的n区，提出了阈值电压反向短沟道效应的模型。用MEDICI对改进的p沟道MOSFET进行了二维仿真，验证了该模型的正确性。此外，还发现了反向短通道效应的实验证据。结果表明，提取阈值电压的方法所固有的误差不是反向短通道效应的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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