{"title":"Effect of leveler on microstructure and stress of electroplated copper for TSV application","authors":"Xue Feng, Wei-Xiong Luo, Ming Li, Su Wang","doi":"10.1109/ICSJ.2013.6756081","DOIUrl":null,"url":null,"abstract":"Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.","PeriodicalId":101667,"journal":{"name":"2013 3rd IEEE CPMT Symposium Japan","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 3rd IEEE CPMT Symposium Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2013.6756081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.