Comparison of multiple fin heights for increasing drain current in N-FinFET

Abstract

The FinFET has emerged as one of the promising devices to extend CMOS technology beyond the scaling limit of conventional CMOS technology. FinFET has better scalability and better short channel effect. In order to increase drain current for device 22nm with multiple-fin-height FinFETs to improve drain current of 60% and decrease area without increasing number of fins and the dielectric is replaced with High-k dielectric material (Hfo2). Tri gate FinFET is developing using VISUAL TCAD and its performance analyzed for I-V characteristics at different Fin heights.