First setup for cooled GaAs cathodes with increased charge lifetime

T. Eggert, J. Enders, M. Espig, Y. Fritzsche, N. Kurichiyanil, M. Wagner, S. Weih
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引用次数: 2

Abstract

GaAs photocathodes can be used for generation of highly polarized electron beams. For high- current applications it is necessary to maximize the charge lifetime of the cathode material to ensure reliable operation. It is expected to increase the local vacuum conditions by cryogenic cooling of the electrode and a local subvolume, due to cryogenic adsorption of reactive residual gas molecules at the surrounding walls. This both protects the sensitive negative-electron-affinity surface of the cathode and allows a higher laser power deposited in the material, resulting in higher possible beam currents. An electrostatic bend is introduced to reduce Ion-backbombardment and further increase the cathode lifetime. To measure the characteristics of such a cryogenic source, a dedicated set-up is being developed at the Photo-CATCH test facility in Darmstadt, Germany.
第一次设置冷却的砷化镓阴极与增加的充电寿命
砷化镓光电阴极可用于产生高极化电子束。在大电流应用中,有必要最大化阴极材料的充电寿命,以确保可靠的工作。预计通过低温冷却电极和局部亚体积来增加局部真空条件,这是由于在周围壁上低温吸附活性残余气体分子。这既保护了阴极敏感的负电子亲和表面,又允许更高的激光功率沉积在材料中,从而产生更高的可能光束电流。引入静电弯曲,减少离子反轰击,进一步提高阴极寿命。为了测量这种低温源的特性,位于德国达姆施塔特的Photo-CATCH测试设施正在开发一种专用装置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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