Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate

Abstract

The solid phase silicidations for the bilayers of Ni/Pt and Pt/Ni sputtered on Si[100] substrates were studied. The effect of Pt addition in the NiSi film on its thermal stability enhancement was investigated. The results show that the phase transformation from Ni(Pt)Si to NiSi/sub 2/ was delayed to higher temperature than the Ni/Si system without Pt as a capping- or inter-layer by more than 100/spl deg/C. The apparent Schottky barrier height of Ni(Pt)Si/n-Si(111) is modulated with the Pt content, and the electrical characteristic is good in the silicidation temperature of 500-800/spl deg/C.