Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

Abstract

Planer-type HEMTs using fully depleted AlGaN/GaN epitaxial layers called EID (Extrinsically electron Induced by Dielectric) AlGaN/GaN MOS-HEMTs are expected to be stable and reliable E-mode operation thanks to its damage-less fabrication process. Fundamental characteristics of the EID-HEMTs for power switching applications were investigated in this study. The fabricated EID-HEMTs exhibited E-mode operation with threshold voltage of 0.5 V, on-resistance of $210\ \mathrm{m}\Omega$ and break-down voltage of 1.1 kV. Furthermore, clear 400 V/10 A switching operation without any harmful symptoms was also demonstrated.