Capacitive Boosting for FPGA Interconnection Networks

F. Eslami, M. Sima
{"title":"Capacitive Boosting for FPGA Interconnection Networks","authors":"F. Eslami, M. Sima","doi":"10.1109/FPL.2011.89","DOIUrl":null,"url":null,"abstract":"FPGA interconnection network is implemented using nMOS pass transistor multiplexers. Since the threshold voltage drop across an nMOS device degrades the high logic value, the pMOS transistors of the downstream buffers do not turn fully off, making this approach suffer from static power consumption due to the short-circuit currents and reduced noise margins. The standard pMOS transistor pull-up in the active feedback of an inverter reduces the static power consumption but degrades the switching time and/or dynamic power consumption. We propose to use capacitive boosting to increase the gate voltage of the pass transistors, thus driving the multiplexer output to the full high voltage level at a faster rate than the pMOS pull-up can alone. This way, the signal transitions are accelerated and the short-circuit current of downstream buffers are cut off. The simulations carried out with Cadence indicate a reduction of at least 10% in propagation delay for the proposed circuit versus the standard one across 180nm, 130nm, 90nm, and 65nm technologies.","PeriodicalId":311066,"journal":{"name":"2011 21st International Conference on Field Programmable Logic and Applications","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Field Programmable Logic and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FPL.2011.89","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

FPGA interconnection network is implemented using nMOS pass transistor multiplexers. Since the threshold voltage drop across an nMOS device degrades the high logic value, the pMOS transistors of the downstream buffers do not turn fully off, making this approach suffer from static power consumption due to the short-circuit currents and reduced noise margins. The standard pMOS transistor pull-up in the active feedback of an inverter reduces the static power consumption but degrades the switching time and/or dynamic power consumption. We propose to use capacitive boosting to increase the gate voltage of the pass transistors, thus driving the multiplexer output to the full high voltage level at a faster rate than the pMOS pull-up can alone. This way, the signal transitions are accelerated and the short-circuit current of downstream buffers are cut off. The simulations carried out with Cadence indicate a reduction of at least 10% in propagation delay for the proposed circuit versus the standard one across 180nm, 130nm, 90nm, and 65nm technologies.
FPGA互连网络的电容增强
FPGA互连网络采用nMOS通管多路复用器实现。由于nMOS器件的阈值电压降降低了高逻辑值,下游缓冲器的pMOS晶体管不能完全关闭,使得这种方法由于短路电流和降低的噪声裕度而遭受静态功耗。在逆变器的有源反馈中,标准pMOS晶体管上拉降低了静态功耗,但降低了开关时间和/或动态功耗。我们建议使用电容增强来增加通路晶体管的栅极电压,从而以比pMOS单独上拉更快的速度将多路复用器输出驱动到全高压电平。这样可以加速信号转换,切断下游缓冲器的短路电流。用Cadence进行的模拟表明,与180nm、130nm、90nm和65nm技术的标准电路相比,所提出的电路的传播延迟至少减少了10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信