Explosion tests on IGBT high voltage modules

S. Gekenidis, E. Ramezani, H. Zeller
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引用次数: 17

Abstract

In this paper, we report on surge current experiments with IGBT modules in low inductance, snubberless circuits. We give design guidelines for robust modules and robust converter designs, discuss scenarios of consequential damage and propose worst case test conditions for explosion safety. For wire bonded modules, the limit for material ejection is at a stored capacitive energy of about 10 kJ. In a good design, the shock wave trajectory is defined and no metallic parts obstruct the plasma expansion. The worst case damage occurs if, initially, a single chip fails. Press-pack modules can be designed to contain the plasma inside the housing in the case of a short circuit. Simple protective measures are sufficient to protect personnel.
IGBT高压模块的爆炸试验
本文报道了IGBT模块在低电感、无阻尼电路中的浪涌电流实验。我们给出了鲁棒模块和鲁棒转换器设计的设计指南,讨论了相应的损坏场景,并提出了爆炸安全的最坏情况测试条件。对于线键模块,材料喷射的极限是在大约10kj的存储电容能量处。在一个好的设计中,冲击波轨迹是明确的,没有金属部件阻碍等离子体膨胀。最坏的情况是,一开始,单个芯片出现故障。压包模块可以设计成在短路的情况下将等离子体包含在外壳内。简单的防护措施足以保护人员。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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