An All-Digital Temperature Sensor with Process and Voltage Variation Tolerance for IoT Applications

Ching-Che Chung, Hsin-Han Huang
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引用次数: 1

Abstract

The embedded temperature sensor which monitors the hot spots of the chip had become an essential circuit for improving the reliability of the system-on-a-chip (SoC). However, most of the temperature sensors cannot resist the influence of voltage variations and results in significant temperature errors. In this paper, the relative reference modeling (RRM)-based temperature sensor is presented. The proposed temperature sensor uses a low-temperature sensitivity voltage classifier and a low-voltage sensitivity proportional to absolute temperature (PTAT) circuit to resist the voltage variations. Addition, the process variations can be eliminated after the three-point calibration. The proposed temperature sensor was fabricated in TSMC 90nm CMOS process. The measured results show that the temperature error of the proposed design is from -1.47°C to 1.40°C with supply voltage 0.9 to 1.1V.
一种全数字温度传感器,具有过程和电压变化公差,适用于物联网应用
嵌入式温度传感器监测芯片的热点,已成为提高片上系统(SoC)可靠性的必要电路。然而,大多数温度传感器不能抵抗电压变化的影响,导致显著的温度误差。本文提出了一种基于相对参考建模(RRM)的温度传感器。该温度传感器采用低温灵敏度电压分类器和与绝对温度成比例的低电压灵敏度(PTAT)电路来抵抗电压变化。此外,三点标定后可以消除工艺变化。该温度传感器采用台积电90nm CMOS工艺制作。测量结果表明,在电源电压为0.9 ~ 1.1V时,设计的温度误差在-1.47 ~ 1.40°C之间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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