Effect of crystal-originated particles (COPs) on ULSI process integrity

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4559001

Po-Ying Chen, S.L. Chen, M. Tsai, M.H. Jing, T. Lin, W. Yeh

引用次数: 0

Abstract

The effects of crystal-originated particles (COPs) on ultra-thin gate oxide for recent ultra large-scale integration (ULSI) devices were studied. Various Czochralski (CZ) silicon wafers were prepared by controlling the pulling speed of silicon ingots to determine the relationships between COPs and the breakdown characteristics of the ultra thin-gate oxide.

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晶源颗粒(cop)对ULSI工艺完整性的影响

研究了晶体源粒子(COPs)对超薄栅极氧化物(ULSI)器件的影响。通过控制硅锭的拉拔速度，制备了多种CZ型硅晶片，确定了COPs与超薄栅氧化物击穿特性的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 IEEE International Reliability Physics Symposium

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