A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Abstract

Based on the Gummel-Poon (GP) model, a simple and physical-based large-signal model for GaInP/GaAs heterojunction bipolar transistors (HBTs) is presented in this paper. We improve the current and transit time model by considering the potential spike effect and negative differential mobility. Different from the UCSD HBT and AgilentHBT models, only 46 parameters are used in our model. The DC characteristics and S-parameter curves are well consistent with the experimental data over a wide range of the operating bias.