Architectural design for next generation heterogeneous memory systems

A. Bivens, Parijat Dube, M. Franceschini, J. Karidis, L. Lastras, M. Tsao
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引用次数: 32

Abstract

New enterprise workloads requiring fast, reliable access to increasing amounts of data have pushed today's memory systems to power and capacity limits while creating bottlenecks as they ensure transactions are persistently tracked for reliability. New storage class memory technologies (such as phase change memory) have the potential to offer high capacity within latency and bandwidth ranges acceptable for a computer memory system and persistence which may help ease the system-level burden of balancing performance and reliability. This paper describes architectural options for addressing the challenges of future, heterogeneous memory systems as well as the attributes required of the next generation memory devices.
下一代异构存储系统的体系结构设计
新的企业工作负载需要快速、可靠地访问不断增加的数据量,这将当今的内存系统推向了功率和容量限制,同时在确保持续跟踪事务的可靠性时产生了瓶颈。新的存储类存储器技术(如相变存储器)有潜力在计算机存储器系统和持久性可接受的延迟和带宽范围内提供高容量,这可能有助于减轻平衡性能和可靠性的系统级负担。本文描述了解决未来异构内存系统挑战的架构选项,以及下一代内存设备所需的属性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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