N. Nidhi, S. Dasgupta, J. Lu, F. Wu, S. Keller, J. Speck, U. Mishra
{"title":"Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm","authors":"N. Nidhi, S. Dasgupta, J. Lu, F. Wu, S. Keller, J. Speck, U. Mishra","doi":"10.1109/DRC.2011.5994531","DOIUrl":null,"url":null,"abstract":"Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels [1,2]. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels [1,2]. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.