A 28 GHz 480 elements digital AAS using GaN HEMT amplifiers with 68 dBm EIRP for 5G long-range base station applications

T. Kuwabara, N. Tawa, Yuichi Tone, T. Kaneko
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引用次数: 20

Abstract

This paper reports the design, development and performance of a 28 GHz 480 elements digital Active Antenna System (AAS) prototype for 5G long-range applications. AAS accommodates 32 channels of 0.15 um GaN HEMT power amplifier chains. The antenna array prototype consists of full digitally controlled 32 streams of 15 elements sub-arrays. They can deliver a total conductive power of 41 dBm and Average Effective Isotropically Radiated Power (EIRP) of 68 dBm for the macro-cell coverage at 28 GHz. The prototype also features newly proposed high density heat spreading structure dissipating around 450 W in an 11 liter compact enclosure. The paper proposes and demonstrates one of direction of the high power GaN HEMT application to the millimeter-wave 5G long-range base stations.
采用GaN HEMT放大器和68 dBm EIRP的28ghz 480元数字AAS,用于5G远程基站应用
本文报道了用于5G远程应用的28 GHz 480元数字有源天线系统(AAS)原型的设计、开发和性能。AAS可容纳32个通道的0.15 um GaN HEMT功率放大器链。天线阵原型由全数字控制的32流15元子阵组成。它们可以提供41 dBm的总导电功率和68 dBm的平均有效各向同性辐射功率(EIRP),用于28 GHz的宏蜂窝覆盖。原型车还采用了新提出的高密度散热结构,在一个11升的紧凑外壳中耗散约450瓦。提出并论证了高功率GaN HEMT在毫米波5G远程基站中的应用方向之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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