Frequency modulation of conductance level in PCM device for neuromorphic applications

A. Trabelsi, C. Cagli, T. Hirtzlin, O. Cueto, M. Cyrille, E. Vianello, V. Meli, V. Sousa, G. Bourgeois, F. Andrieu
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Abstract

In this study we report for the first time the control of conductance level in PCM cells by means of a frequency modulation of progressive SET pulses. We show that by applying a train of progressive SET pulses, the conductance increases gradually and eventually saturates to a value Gsat. The latter can be tailored by changing the duty cycle of the pulse train. We propose a simple physics-based model to explain this effect. First, we simulated the thermal condition in the active region and showed that the increase of conductance was due to nucleation of a spherical hollow region around a central core, where re-amorphization takes place during programming. Based on this we illustrate that the frequency modulation can be analytically described by an equilibrium equation where the increase of conductance is balanced by the intrinsic chalcogenide resistance drift. The model is in very good agreement with data and shows that a fine tuning of the PCM device can be achieved. A frequency blind modulation of the programming pulse is believed to be much easier to be implemented in neuromorphic circuits as synaptic device [1] [2].
用于神经形态应用的PCM器件电导电平的频率调制
在这项研究中,我们首次报道了通过频率调制渐进式SET脉冲来控制PCM细胞的电导水平。我们表明,通过施加一系列渐进的SET脉冲,电导逐渐增加并最终饱和到一个值Gsat。后者可以通过改变脉冲序列的占空比来定制。我们提出了一个简单的基于物理的模型来解释这种效应。首先,我们模拟了活性区的热条件,并表明电导的增加是由于在中心核心周围的球形空心区域成核,在编程过程中发生了再非晶化。在此基础上,我们说明了频率调制可以用一个平衡方程来解析描述,其中电导的增加由本征硫族电阻漂移来平衡。该模型与实测数据吻合良好,表明可以实现对PCM器件的微调。编程脉冲的频率盲调制被认为更容易在神经形态电路中实现,如突触装置[1][2]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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