Integration of polycide/metal capacitors in advanced device fabrication

Abstract

Polycide/metal capacitors with high unit area capacitance and high linearity are successfully integrated into submicron CMOS device fabrication. The capacitor implementation is modular and low cost: the capacitor dielectric is deposited at low temperature and only one additional mask is needed for patterning the capacitor top plate. High voltage-capacitance linearity is obtained for the TEOS oxide capacitors of the capacitance density at 1 fF/spl mu/m/sup 2/, with the linear voltage coefficient of capacitance LVCC <5 ppm/V and the quadratic voltage coefficient of capacitance QVCC<2 ppm/V/sup 2/. For the nitride capacitors, 1.5 fF//spl mu/m/sup 2/ unit area capacitance is obtained with the LVCC <70 ppm/V and the QVCC <20 ppm/V/sup 2/.