Nanomechanical structures with an integrated carbon nanotube

H. Miyashita, T. Ono, M. Esashi
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引用次数: 12

Abstract

In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5/spl sim/5 /spl mu/m), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be about 4/spl times/10/sup -5/ /spl Omega//spl middot/cm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.
集成碳纳米管的纳米力学结构
本文报道了用硅微加工技术在相对硅电极间桥接窄间隙(0.5/spl sim/5 /spl mu/m)的独立碳纳米管(CNT)的制备方法。在镍(Ni)或铁(Fe)金属化后作为碳纳米管生长的催化剂,在热丝化学气相沉积(HF-CVD)生长过程中,使用氢稀释的乙炔作为源气体,在30V的电压下在这些电极之间生长碳纳米管。碳纳米管从负极生长到另一个负极。从电流-电压(I-V)特性的测量,碳纳米管与硅电极之间的接触表现出欧姆行为,估计碳纳米管的电阻率约为4/spl倍/10/sup -5/ /spl ω //spl middot/cm。这种纳米制造技术将适用于集成在单个碳纳米管上的纳米机械元件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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