Extended gate field effect transistor (EGFET) integrated readout interfacing circuit for pH sensing

H. Guliga, Wan Fazlida Hanim Abdullah, S. H. Herman
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引用次数: 9

Abstract

This paper presents the integrated readout interfacing circuit (IROIC) for extended gate field effect transistor (EGFET) to be used as pH sensor. Development of IROIC for EGFET is for the creation of single chip for smart sensors with low cost. Implementation of constant voltage constant current (CVCC) technique to this architecture, resulted in the variation of electrochemical potential can be monitored via the output of IROIC. The design of IROIC was targeted to Silterra 0.13 μm CMOS technology with the size approximately 124 μm × 70 μm. The discrete level of single supply ROIC gave linear sensitivity to the measured pH values with range pH4-pH10 which was 46.9 mV/pH. This value was nearly to that the dual supply ROIC (45.3 mV/pH). The simulation result shows, Three Stage operational amplifier provided good characteristics for implementation of IROIC and produced minimal output voltage noise density which was 4μV/√(Hz) at 100Hz.
用于pH传感的扩展门场效应晶体管(EGFET)集成读出接口电路
本文介绍了一种用于扩展门场效应晶体管(EGFET)的集成读出接口电路(IROIC),该电路可用于pH传感器。用于EGFET的IROIC的开发是为了创造低成本的智能传感器单芯片。在该体系结构中实现恒压恒流(CVCC)技术,使得电化学电位的变化可以通过IROIC的输出来监测。IROIC的设计目标是Silterra 0.13 μm CMOS技术,尺寸约为124 μm × 70 μm。单电源ROIC的离散电平对pH值具有线性灵敏度,范围为pH4-pH10,为46.9 mV/pH。该值接近双电源ROIC (45.3 mV/pH)。仿真结果表明,三级运算放大器为实现IROIC提供了良好的特性,在100Hz时输出电压噪声密度最小,为4μV/√(Hz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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