A Low-Temperature-Coefficient and High-PSRR Bandgap Reference for Readout Circuit of SPAD

Xuefeng Ye, D. Zeng, Xiangliang Jin, Yang Wang
{"title":"A Low-Temperature-Coefficient and High-PSRR Bandgap Reference for Readout Circuit of SPAD","authors":"Xuefeng Ye, D. Zeng, Xiangliang Jin, Yang Wang","doi":"10.1109/ASICON47005.2019.8983498","DOIUrl":null,"url":null,"abstract":"In this paper, a bandgap voltage reference (BGR) with a low temperature coefficient, used for readout circuits of SPAD, has been designed and fabricated successfully in the standard MXIC 0.5µm 1P3M CMOS process. The area of the core circuit occupies 244×215µm2. The test results show that the designed bandgap reference could work normally under the power supply voltage of 2.8V to 8V with a line regulation (LNR) of 0.0096%. At room temperature (25°C), the stable reference output voltage is 1.168V. The reference voltage varies by only 1.8mV within the temperature range of 0~150°C, and leads to a temperature coefficient of 10.28ppm/°C. Under the power supply of 5V, the BGR chip exhibits a power supply rejection ratio (PSRR) of 76.4dB at 1KHz.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a bandgap voltage reference (BGR) with a low temperature coefficient, used for readout circuits of SPAD, has been designed and fabricated successfully in the standard MXIC 0.5µm 1P3M CMOS process. The area of the core circuit occupies 244×215µm2. The test results show that the designed bandgap reference could work normally under the power supply voltage of 2.8V to 8V with a line regulation (LNR) of 0.0096%. At room temperature (25°C), the stable reference output voltage is 1.168V. The reference voltage varies by only 1.8mV within the temperature range of 0~150°C, and leads to a temperature coefficient of 10.28ppm/°C. Under the power supply of 5V, the BGR chip exhibits a power supply rejection ratio (PSRR) of 76.4dB at 1KHz.
一种用于SPAD读出电路的低温度系数高psrr带隙基准
本文在标准MXIC 0.5µm 1P3M CMOS工艺下,成功设计并制作了用于SPAD读出电路的低温带隙基准电压(BGR)。核心电路的面积为244×215µm2。测试结果表明,所设计的带隙基准能在2.8V ~ 8V的电源电压下正常工作,线路稳压(LNR)为0.0096%。在室温(25℃)下,稳定参考输出电压为1.168V。在0~150℃的温度范围内,参考电压仅变化1.8mV,温度系数为10.28ppm/℃。在5V电源下,BGR芯片在1KHz时的电源抑制比(PSRR)为76.4dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信