Modeling of tot al dose radiation effect of RF PD SOI-MOSFET using Sentaurus TCAD

Abstract

An investigation of characteristics of partially depleted are - type SOI-MOSFET transistors is performed using Sentaurus TCAD and presented here. It is shown that such devices can operated as amplifiers for the frequencies of above 2GHz. More over it was found that such devices are stable against influence of collected radiation.