A Novel Lateral Power MOSFET with Ultra-low Energy Consumption and Extraordinary Robustness

Abstract

A novel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with fourfold charge-compensation is proposed. The first feature of the proposed device is that a P-bury layer and a surface high-$k$ (HK) film jointly compensate the drift region in an all-round way. The second feature is that the HK film is also contributed to resisting the adverse effects caused by charge deviations. Hence, due to the above two features, the proposed device is able to obtain not only excellent performance but also good robustness. According to the simulation results, in comparison with the conventional LDMOS with single, double and triple charge-compensation, the proposed one gets a specific on-resistance reduced by 48%, 37% and 17%, respectively. Its figure of merit reaches 15.7 MW/cm2, which is superior to the prior art. Moreover, the proposed device presents much better immunity to the charge deviations and the interface charges.