New Proposed Methodology for Radiation Hardening By Design of MOS Circuits

Abstract

One of the radiation effects on ICs is the Total Ionizing Dose (TID) effects. TID effects are accumulative effects that build up during the exposure time and may cause a functionality failure for the exposed ICs. In this paper, we propose a new systematic methodology for developing a predictive TID-aware models for bulk FETs. TID-aware models developed using our methodology enable circuit designers to predict the expected worst case performance degradation of their circuits if exposed to high radiation doses.